雙漂移(P+PNN+)雪崩二極管的計算機輔助分析
COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE
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摘要: 本文報道了8mm硅雙漂移雪崩二極管的計算機計算結(jié)果,并把雙漂移器件與單漂移(P+NN+型)器件進行了比較,從而證實雙漂移器件在輸出功率和效率等方面都具有優(yōu)越性,同時還研究了摻雜分布、溫度、直流偏置和高頻調(diào)制電壓對器件特性的影響。本文為設(shè)計毫米波段雙漂移雪崩二極管振蕩器和放大器提供了理論數(shù)據(jù)。
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關(guān)鍵詞:
Abstract: The results calculated by computer for the double-drift-region IMPATT diode on 3 mm waveband are reported. A comparison between single-drift and double-drift diodes is presented. The advantage of double-drift devices in respect to power output and efficiency is given. At the same time, effects of doping profile, current density and RF voltage on the performences of these devices are investigated. The theoretical data for design of double-drift IMPATT oscillator and amplifier on 8 mm waveband is also given. -
D. L. Scharfetter,W.J. Evans and R. L. Johnston, Proc. IEEE, 58(1970), 1131-3.[2]W. N. Grant, Solid State Elect., 16(1973), 1189-1203.[3]R. A. Gibilin, E. F. Scherer and R. L. Wierich, IEEE Trans. on ED, ED-20(1973), 404-418.[4]W. E. Schroeder and G. I. Haddad, Proc. IEEE, 61(1973), 153-182.[5]宋文淼,方希曾,電子科學(xué)學(xué)刊, 6(1984), 400-408. -
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