差分SPV法測(cè)量a-Si:H材料少子擴(kuò)散長(zhǎng)度的數(shù)學(xué)模型
THE MATHEMATICAL MODEL OF THE DIFFERENTIAL SPV TECHNIQUE FOR MEASURING MINORITY CARRIER DIFFUSION LENGTH OF a-Si:H FILM
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摘要: 用差分SPV法測(cè)量a-Si:H材料的少子擴(kuò)散長(zhǎng)度,可以消除被測(cè)樣品背面結(jié)的影響.本文討論了這種測(cè)量方法的數(shù)學(xué)模型,導(dǎo)出了測(cè)量公式,分析了影響測(cè)量結(jié)果的各種因素.
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關(guān)鍵詞:
- a-Si:H材料; 差分SPV測(cè)量; 擴(kuò)散長(zhǎng)度
Abstract: The differential measuring mode for minority carrier diffusion length of aSi:H film by SPV technique can eliminate the influence of back juction of the sample. This paper analyses mathematical model of such mode, deduces formula for practical use, and discusses various elements which affect the measured results. -
A.R. Moore, J. Appl. Phys. 56(1984)10, 2796-2802.[2]A.R. Moore.[J].J. Appl. Phys.1983,54:1-[3]L. Sakata, J. Appl. Phys. 61 (1987)5, 1916-1927.[4]R. Sohwarz, D. Slobodin, Appl. Phys. Less., 47 (1985)7, 740-747.[5]張治國(guó),金屬-非晶硅Schottky結(jié)的形成及其用于SPV法少子擴(kuò)散長(zhǎng)度的測(cè)量暨非晶硅中電于態(tài)的研究,京北工業(yè)大學(xué)電子工程學(xué)系碩士論文,北京,1991年. -
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