非晶硅少子擴(kuò)散長(zhǎng)度的測(cè)量
MEASUREMENT OF DIFFUSION LENGTH OF HOLES IN a-Si:H
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摘要: 正 (一)引言 非晶硅少子擴(kuò)散長(zhǎng)度對(duì)非晶硅太陽(yáng)電池的性能有重要影響,它是表征非晶硅材料質(zhì)量的重要參數(shù)。最近Dresner和Moore分別用表面光電壓法(SPV法)測(cè)量非晶硅少于擴(kuò)散長(zhǎng)度獲得成功。但前者需要超高真空系統(tǒng),樣品表面要經(jīng)過(guò)濺射和退火,后者使用非晶硅液體肖特基勢(shì)壘,裝置較煩。我們?cè)囉庙攲拥矸e了金屬鎳的非晶硅薄膜作樣品,利用鎳和非晶硅膜構(gòu)成的金屬肖特基勢(shì)壘進(jìn)行表面光電壓測(cè)量,獲得成功。這樣
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關(guān)鍵詞:
Abstract: The results of a study in the diffusion length of holes in a-Si:H by measuring the sur-face photovoltage of the metal (Ni) Schottky barrier is reported. The change of field-assis-ted hole transport with bias light was observed. It is believed that measurement of diffusion length by this method may become a useful way of detecting and improving the quality of a-Si:H. -
J. Dresner, D. J. Szostak and B. Goldstein, Appl. Phys. Lett., 38(1981), 998.[3]A. R. Moore, Appl. Phys. Lett., 40(1982), 403.[7]R. O. Bell, Appl. Phys. Lett., 36(1980), 936. -
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