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高效率硅太陽電池AR-BSF一次成型工藝研究

劉恩科,  賈全喜

劉恩科, 賈全喜. 高效率硅太陽電池AR-BSF一次成型工藝研究[J]. 電子與信息學(xué)報(bào), 1988, 10(3): 285-288.
引用本文: 劉恩科, 賈全喜. 高效率硅太陽電池AR-BSF一次成型工藝研究[J]. 電子與信息學(xué)報(bào), 1988, 10(3): 285-288.
Liu Enke, Jia Quanxi. A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS[J]. Journal of Electronics & Information Technology, 1988, 10(3): 285-288.
Citation: Liu Enke, Jia Quanxi. A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS[J]. Journal of Electronics & Information Technology, 1988, 10(3): 285-288.

高效率硅太陽電池AR-BSF一次成型工藝研究

A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS

  • 摘要: 本文描述一種用LPCVD方法淀積Si3N4形成太陽電池減反射膜(AR)同時(shí)又制得高效率硅太陽電池鋁合金高低結(jié)背面場(BSF)的新工藝。該工藝不僅簡化了太陽電池的制作過程,即電池的AR和BSY一次形成,而且由于系統(tǒng)處于高真空,電池處在N2和H2的氣氛中,所以改善了太陽電池發(fā)射區(qū)的表面特性。實(shí)驗(yàn)結(jié)果表明:為獲得較好的電池性能,在完成電池的AR和BSF時(shí),厚的鋁膜,較高的淀積Si3N4溫度以及在電池發(fā)射區(qū)表面生長80100的SiO2層是必要的。
    Abstract: A new processing method in which the antireflective coating (AR) Si3N4 is deposite by LPCVD, at the same time, the Al-alloyed high low junction BSF is formed, is described. In the method, the procedure is simplified for fabricating high efficiency silicon solar cells, that is the AR-BSF to be formed in one step, and because the system is in high vacuum and the cells are in the ambinet of N2 as well as H2, so that the surface characteristics of emitters in the cells is improved.
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  • C. E. Norman, R. E. Tomas, IEEE Trans. on ED, ED-27(1980), 731-737.[2]A. Silard, R. Marinescu, M. Tazlauanu, IEEE Electron Device Letter, 4(1983), 164-166.[3]M. A. Green, et al.,IEEE Trans. on ED, ED-31(1981), 679-683.[4]A. Rohatgi, P. Rai-choudhary, IEEE Trans. on ED, ED-31(1984), 596-601.[5]J. Mandelkorn, J. H. Lamneck, Jr., Proc. 9th IEEE Photovoltaic Specialists Conf., Silver Spring, Maryland, 1972, ppp. 66-71.[6]M. B. Spitzer, S .P. Tobin, C. J. Keavney, IEEE Trans. on ED, ED-31(1984), 546-550.[7]R. Hezel, Solid State Electron., 24(1981), 863-868.[8]K. Rajkanan, J. Shewchun, Solid State Electron., 22(1979), 193-197.[9]J. C. Fossum, IEEE Trans. on ED, ED-24(1977), 323-325.[10]J. G. Fossum, E. L. Burgess, Appl. Phys. Lett, 33(1978), 238-240.[11]Jia Quanxi, Zhu Changchun, Liu Enke, Proc. 2nd Internatinonal Photovoltaic Science and engineering Conf.,Beijing, China, 1986, pp. 223-226.Jia Quanxi, Zhu Changchun, Liu Enke, Proc. 2nd International Photovoltaic Science and Engineering Conf, Beijing, China, 1986, pp. 328-331.
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出版歷程
  • 收稿日期:  1986-07-21
  • 修回日期:  1988-01-09
  • 刊出日期:  1988-05-19

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