氧離子和氮離子共注人硅形成絕緣埋層的微觀結(jié)構(gòu)及其光學(xué)性質(zhì)
OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION
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摘要: 本文利用俄歇能譜和紅外吸收譜研究了硅中O+(200keV,1.81018/cm2)和N+(180keV,41017/cm2)共注入、并經(jīng)1200℃、2h退火后所形成的絕緣埋層的微觀結(jié)構(gòu)及其光學(xué)性質(zhì)。結(jié)果表明:O+和N+共注入所形成的絕緣埋層是由SiO2相和不飽和氧化硅態(tài)組成;在氧化硅埋層的兩側(cè)形成氮氧化硅薄層;表面硅-埋層的界面和埋層-體硅的界面的化學(xué)結(jié)構(gòu)無明顯差異。通過對(duì)波數(shù)范圍在5000--1700cm-1的紅外反射譜的計(jì)算機(jī)模擬,得到了該絕緣埋層的折射率、厚度等有關(guān)的參數(shù)值,這些結(jié)果與離子背散射譜的分析結(jié)果相一致。本文還討論了絕緣埋層的形成特征。Abstract: The microstructure and optical properties of a buried layer formed by O+ (200keV, 1.81018/cm2) and N+ (180keV, 41017/cm2) co-implantation and annealed at 1200 ℃ for 2h have been investigated by Auger electron, IR absorption and reflection spectroscopic measurements. The results show that the buried layer consists of silicon dioxide and SiO2 (x2) and the nitrogen segregates to the wings of the buried layer where it forms an oxyni-tride. By detail theoretical analysis and computer simulation of the IR reflection interference spectrum, refractive index profiles of the buried layer woere obtained.
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R. C. Barkie, et al., Nucl. Instr.and Meth, B32(1989), 433.[2]R. F. Pinizzotto, J. Cryst. Growth,63(1988). 559.[3]C. G. Tupper, et al., Appl. Phys. Lett, 45(1984), 57.[4]T. Makino, J. Takahashi, Appl. Phys. Lett, 50(1987), 267.[5]R. C. Barklie, et al., J. Phys., C19(1986), 6417.[6]Z. Zimmer, H. Vogt, IEEE Trons. on ED, ED-30(1983), 1515.[7]C. D. Meekison et al.,Inst. Phys. Conf. Der., Vol. 76, (1985), 489.[8]J. Petrozzello, et al.,J. Appl. Phys., 58(1988), 427.[9]K. J. Resson, et al., Nucl. Instr. and Meth., B32(1988), 427.[10]A. Joshi, et al., Auger enargy spectrmcopi: analysis, in Method of Surface Analysis, ed. A. W. Czan-[11]derna (Elsevier, Amsterdam, 1975) ch. 5.[12]R. Tromp, et al., Phys. Rev. Lett. 55(1985), 2332.[13]M. L. Naiman, et al., Effect of nitridation of silicon dioxide on it infrared spectrum, in Proc. Silicon Nitride Thin Insulatng Film, San Francisco, (1983), p. 302.[14][13][15]R. P. Vasquez, et al., Appl. Phys. Lett, 44(1984). 969.[16]O. S. Heavens, Optical Properties of Thin Solid Films, Academic, New York, (1955).[17]Yu Yuehui, et al., Mater. Lett, 8(1989), 95.[18]Yu Yuehui, et al., Appl. .Surf. Sei, 40(1989), 145.[19]方子韋等,半導(dǎo)體學(xué)報(bào),11(1990),260. -
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