p-InP/TiPdAu體系的冶金行為和電學(xué)特性
METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS
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摘要: 正 (一)引言 近年來InP在光電和微波器件中的應(yīng)用已引起廣泛重視。對(duì)InP的歐姆接觸和肖特基勢(shì)壘已有報(bào)道,這些結(jié)果表明,Bp較Bn大,n-InP的比接觸電阻較p-lnP的低。以InP為襯底的多層結(jié)構(gòu)器件中,表面層有時(shí)是p-InP,因此研究p-InP與接觸金屬界面上的冶金行為和電學(xué)特性,對(duì)改善器件參數(shù)和提高器件的可靠性有實(shí)際意義。對(duì)p-InP與接觸金屬Pd,Mg/Ag,Au-Zn,Mg/Au,Pd/Ag的界面特性,已有用俄歇電子能譜(AES)和電子探針(EP)進(jìn)行的研究結(jié)果
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關(guān)鍵詞:
Abstract: The interdiffusion of p-InP/TiPdAu at interface has been investigated by Auger electron spectroscopy (AES). The surface morphology of heat treatment samples are observed. The specific contact resistance as a function of heat treatment temperatures for the p-InP/ TiPdAu systems is also given.It is found that the interdiffusion of Au, In, P occurs during the heat treatment of p-InP/TiPdAu. The Pd layer as a diffusion barrier plays an important role. The interdiffusion, morphology and specific contact resistance for heat treatment samples of p-InP/TiPdau have interconnection and strong dependence on each other. The TiPdAu layers are used as p-electrodes for InGaAsP/InP double heterojunction light emitting diodes. The p-electrode has good stability. -
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