砷化鎵氣相摻硫外延和亞微米薄層的制備
THE SULPHUR INCORPORATION AND THE GROWTH OFSUBMICRON THIN FILM IN GaAs VAPOR PHASEEPITAXY SYSTEM
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摘要: 本文介紹了Ga-AsCl3-H2體系,研究了氣相外延時(shí)硫的摻雜行為,討論了硫的摻雜機(jī)理和生長(zhǎng)了亞微米薄層。制得的亞微米外延層的質(zhì)量表明,表面形貌良好,缺陷少,重復(fù)性好。典型的電學(xué)性質(zhì)為:當(dāng)厚度0.4m和濃度為121017/cm3時(shí),擊穿電壓VB=710V。在單層和多層外延結(jié)構(gòu)中,界面濃度基本是突變的,過渡區(qū)約0.1m。這些外延片已用于制備變?nèi)莨芎瓦h(yuǎn)紅外探測(cè)器等。
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關(guān)鍵詞:
Abstract: The doping behavior of sulphur in GaAs vapor phase epitaxy has been studied with the Ga-AsCl3-H2 system. The doping machamsm of sulphur has been discussed and submieron epilayers have been grown. It has been shown that the epitaxial layer obtained has high qualities and the reprodueibility of epitaxial growth is good. The typical electrical properties of epitaxial layer obtained are that the breakdown voltage is about 7-10V and the carrier concentration is about 1-2 1017/cm3 when epilayer thickness is less than 0.4m. For the single layer and the multilayer structures, the concentration drop in interface between the active layer and the buffer layer or substrate are sharp and the width of interface region is about 0.1m. The epilayers obtained have been used to fabricate the microwave devices such as varactor and far infrared detectors. -
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