襯底熱空穴導(dǎo)致的薄柵介質(zhì)經(jīng)時(shí)擊穿的物理模型研究
Study on substrate hot-hole-induced physical model of TDDB in thin gate dielectric
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摘要: 該文定量研究了熱電子和空穴注入對(duì)薄柵氧化層擊穿的影響,討論了不同應(yīng)力條件下的閾值電壓變化,首次提出了薄柵氧化層的經(jīng)時(shí)擊穿是由熱電子和空穴共同作用的結(jié)果,并對(duì)上述實(shí)驗(yàn)現(xiàn)象進(jìn)行了詳細(xì)的理論分析,提出了薄柵氧化層經(jīng)時(shí)擊穿分兩步。首先注入的熱電子在薄柵氧化層中產(chǎn)生陷阱中心,然后空穴陷入陷阱導(dǎo)致薄柵氧擊穿。
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關(guān)鍵詞:
- 薄柵氧化層; 經(jīng)時(shí)擊穿; 襯底熱空穴（SHH）; 模型
Abstract: The roles of hot electrons and holes in dielectric breakdown of the thin gate oxide have been quantitatively investigated in this paper, The changes of threshold voltage have been discussed under different stress conditions. This paper is the first report that points out the cooperation of hot electrons and holes is essential for the time dependent dielectric breakdown in thin gate oxide. A detailed theory analysis is made and a two-step models of thin gate oxide is presented. The first step is injected hot electrons create trap centers in thin gate oxide, and the second step is thin gate oxide breakdown induced by hole trapping. -
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