掃描電子束在絕緣襯底上生長(zhǎng)單晶硅薄膜(SOI)的實(shí)驗(yàn)研究
THE GROWTH OF MONOCRYSTALLINE SILICON THIN FILM ON INSULATOR (SOI) BY SCANNING ELECTRON BEAM
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摘要: 在絕緣襯底上生長(zhǎng)單晶硅薄膜,即SOI技術(shù),是近年發(fā)展起來研制三維集成電路的一項(xiàng)新技術(shù)。本文討論了利用掃描電子束對(duì)淀積在SiO2上的多晶硅薄膜進(jìn)行改性的實(shí)驗(yàn)。采用籽晶液相外延形成單晶硅薄膜。本實(shí)驗(yàn)的重點(diǎn)在于摸索電子束的功率密度、掃描速度、襯底的溫度和樣品結(jié)構(gòu)等因素對(duì)形成單晶硅薄膜質(zhì)量的影響。實(shí)驗(yàn)取得了較好的結(jié)果,獲得了20025m2的單晶區(qū)。
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關(guān)鍵詞:
- 單晶硅薄膜; SOI技術(shù); 材料改性
Abstract: An experiment for preparation of SOI films by using scanning electron beam to modify polycrystalline silicon on SiO2 is presented. This method takes on the lateral epitaxial growth of liquid phase crystallon to form monocrystal Si films. The effects of beam power density, scanning velocity, temperature of substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the mono-crystalline silicon zone is nearly 20025m2. -
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