測量Si/SiO2系統(tǒng)低界面態(tài)分布的MOS恒流準靜態(tài)小信號技術(shù)
MOS CONSTANT CURRENT QUASISTATIC SMALL-SIGNAL TECHNIQUE FOR DETERMINATION OF LOW INTERFACE STATE DISTRIBUTION OF Si/SiO2 SYSTEM
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摘要: 本文提出了用MOS恒流準靜態(tài)小信號技術(shù)同時測量MOS的準靜態(tài)電容、高頻電容和半導體表面勢的新方法。用此方法可以快速、準確地確定Si/SiO2系統(tǒng)的低界面態(tài)密度分布。采用同步限幅差放技術(shù),使界面態(tài)密度的測量靈敏度提高了一個量級。
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關(guān)鍵詞:
Abstract: A new technique called MOS constan t current quasistatic small-signal technique is given. Using this technique the quasistatic capacitance, high frequency capaeitanee and semiconductor surface potential of MOS capacitor can be measured simultaneously, and the low interface state distribution of Si/SiO2 system can also be rapidly and accurately determined. Due to the use of synchronous differential amplification technique with limited amplitude, the sensitivity of the new technique in measuring the interface state density is raised about an order of magnitude. -
M. Kuhn, Solid-State Elect., 13(1970), 837.[2]R. Castagne and A. Vaipaille, Surf. Sci., 28(1971), 157.[3]A. Goetzberger, E. Klasrnann, M. J. Schuz, CRC Critical Reviews in Solid-State Sci., 7(1976), 9.[4]C. N. Berlund, IEEE Trans. on ED, ED-13(1966), 701. -
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