雙勢(shì)壘隧道發(fā)光結(jié)Ⅰ-Ⅴ特性中的負(fù)阻現(xiàn)象
THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS
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摘要: 制備了含兩層絕緣層的雙勢(shì)壘結(jié)構(gòu)隧道發(fā)光結(jié),介紹了其結(jié)構(gòu)特點(diǎn),分析了電子在結(jié)中的共振隧穿特性。結(jié)合電子隧穿特性及結(jié)的發(fā)光機(jī)理,對(duì)結(jié)I-V特性中負(fù)阻現(xiàn)象的產(chǎn)生及其與表面等離極化激元激發(fā)發(fā)光的關(guān)系進(jìn)行了研究。Abstract: The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed. In connection with the electronic resonant tunneling and light emission mechanism of the junction, the negative resistance phenomenon (NRP) in the I-V curve and the relation between NRP and Surface Plasmon Polariton(SPP) have been studied especially.
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