MOSFET中載流子能量輸運(yùn)計(jì)算機(jī)輔助分析
COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs
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摘要: 本文提出了能量輸運(yùn)問題的二維MOSFET的數(shù)值模擬,其中計(jì)入了產(chǎn)生、復(fù)合以及載流子的溫度梯度對(duì)器件特性的影響;還提出了改進(jìn)的遷移率模型。對(duì)微米和亞微米MOSFET樣品的模擬結(jié)果表明,本文所提出的模型和方法與實(shí)驗(yàn)符合得很好。Abstract: The two-dimensional numerical simulation of energy transport for MOS FETs is presented, in which the effect of generation, recombination and temperature gradiem of carriers on the characteristics of the devices are considered. An improved mobility model is also proposed. The numerical results of micrometer and submicrometer MOSFETs show that the present model fits esperiment very well.
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