均勻磁場聚焦部分屏蔽流電子注的一種設計方法
A METHOD OF THE DESIGN OF ELECTRON BEAMS FROM PARTIALLY SHIELDED CATHODE WITH UNIFORM MAGNETIC FOCUSING FIELD
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摘要: 本文敘述了適用于軸對稱強流電子光學系統(tǒng)各種磁結(jié)構的部分屏蔽流過渡區(qū)的設計方法。通過綜合選取磁系統(tǒng)和電子槍參數(shù),實現(xiàn)了磁系統(tǒng)與電子槍的最佳匹配,獲得了屏蔽系數(shù)大于0.8,波動小于1％的電子注。
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關鍵詞:
Abstract: This paper describes a method of the design of the transition region of the electron beams from partially shielded cathode. This method is applicable to magnetic focusing structures of the axisymmetric high-density electron beam. Through synthetical choice of the parameters of a magnetic system and an electron gun, a optimum matching between the magnetic and the electron gun is obtained. So good results are given: a shielding coefficient Kc is higher than 0.8, a ripple ratio of the electron beams is less than 0.01. -
V. Bevc.[J].J. L. Palmer and C. ssskind, the Journal of the British I. R. E..1958,18:-[2]И.В.Алямовский著,黃高年譯,電子注與電子槍,電子管技術編組,1974年.[3]電子管手冊編委會,微波管電子光學系統(tǒng)設計手冊,第五章,國防工業(yè)出版社,1981年.[4]電子管手冊編委會,強流電子槍優(yōu)選系列,國防工業(yè)出版社,1979年. -
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