VDMOS器件二維數(shù)值模擬和典型參數(shù)優(yōu)化分析
TWO-DIMENSIONAL NUMERICAL SIMULATION FOR VDMOS DEVICE AND THE OPTIMIZATION OF ITS TYPICAL PARAMETERS
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摘要: 本文編制了功率MOSFET二維穩(wěn)態(tài)分析軟件TDSPM程序基于漂移擴(kuò)散模型,特別考慮了功率器件高壓工作狀態(tài)下的速場(chǎng)特性和強(qiáng)場(chǎng)產(chǎn)生機(jī)制,因此可以對(duì)器件各工作區(qū)(包括擊穿區(qū))進(jìn)行模擬。用全耦合法求解聯(lián)立方程,用截?cái)喾ㄐ拚Y(jié)果,大大改善了程序求解的收斂性和穩(wěn)定性,使求解加壓步長(zhǎng)可取得很大(飽和區(qū)漏壓可取100200V)。用TDSPM模擬VDMOS,得到器件的外部特性曲線和內(nèi)部物理量分布;著重分析了擊穿過程的內(nèi)部機(jī)制;最后用TDSPM對(duì)器件進(jìn)行了優(yōu)化分析。
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關(guān)鍵詞:
- 功率晶體管; MOS場(chǎng)效應(yīng)晶體管; 數(shù)值模擬; 擊穿
Abstract: A software for numerical simulation of power MOSFET, called TDSPM, is developed. In the program, DDM model is used. The velocity-electrical field characteristics and generation/recombination effect in high electrical field region for electrons are specially considered for simulating device performances at high voltage including the case of breakdown. The entirely coupled method is used. To enlarge the increment of applied voltage, the truncation method is employed. With the truncation method, the increment of drain-to-source of 100--200V can be used in saturation region. TDSPM is applied to simulation of VDMOS. The output characteristics are simulated. Internal distributions of some physical parameters are calculated and investigated. Special emphasis is placed on breakdown. At last the software is applied to optimization of VDMOS. -
B. J. Baliga, Mordern Power Device, New York, Weley, (1987).[2]S. Selberherr, Analysis and Simulation of Power Semiconductor Device, Springer-Verlay, Wien, New York, (1984).[3]A. F. Franz, IEEE Trans. on CAD, CAD-4(1985)3, 177-189.[4]粱蘇軍,開關(guān)功率MOSFET的設(shè)計(jì)與研制,電子科技大學(xué)碩士論文,成都,1986年.[5]A. Schuetz, Simulation of Avalanche Breakdown in MOS Transistor, Ph. D. Dissertation, Techniche Univ.[6]Wien (in German), (1982).[7]R. Van overstraeten, Solid State Electronics, 13(1970)5, 583-608.[8]K. Hwang, D. H. Navon et al., IEEE Trans. on ED, ED-32(1985)6, 1143-1145. -
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