氫還原鉛硅酸鹽玻璃表面層結(jié)構(gòu)的研究
STUDY OF THE SURFACE STRUCTURE OF LEAD SILICATE GLASS REDUCED BY HYDROGEN
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摘要: 本文應(yīng)用X光電子能譜儀(XPS)和俄歇電子能譜儀(AES)研究了經(jīng)燒氫還原后鉛硅酸鹽玻璃(該玻璃就是微通道板次級(jí)電子發(fā)射層材料)中各元素濃度隨深度的分布;還應(yīng)用電子探針(EP)研究了體內(nèi)元素分布,并討論了不同燒氫還原溫度所形成的發(fā)射層結(jié)構(gòu)對(duì)微通道板電子倍增性能的影響;在此基礎(chǔ)上作者提出了新的微通道板次級(jí)電子發(fā)射層結(jié)構(gòu)。Abstract: The XPS, AES and EP have been used to study the elemental depth-distributions of secondary eletron emission layer of lead silicate glass reduced by hydrogen. The samples treated at different temperatures have differences in their micro-structures. The effects of different reduced temperature have been discussed, and new model of the layer of secondary electron emitter has been suggested
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Max Knoll,著,華東電子管廠技術(shù)情報(bào)室編譯,電子器件的材料及制備, 1972年,第906頁(yè).[2][2][3]G. E. Hill, Advancesin Elctronics and Electronic Physics. 40A,(1976), pp. 153-165.[4][3][5]陶兆民,電子學(xué)通訊,1(1979)4,184-186.[6]汪金祥,特種坡璃,3(1987)2,13-20.[7]中科院電子聽六室電子倍增器研制組,電子學(xué)通訊,1976年,第2期,第1-9頁(yè).[8]A.M.Tyutikov et al., The Soviet Journal of Glass Physics and[9]Chemistry, 7 (1980) 6, 705-711. -
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