6H－SiC MOS結(jié)構(gòu)電特性及其輻照效應(yīng)的研究
Study of the electric characteristics and radiation response of 6h-sic mos structure
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摘要: 對(duì)SiC MOS結(jié)構(gòu)輻照引起的電參數(shù)退化及其電特性進(jìn)行了研究。結(jié)果說(shuō)明:在氧化層電場(chǎng)較高時(shí)Fowler-Nordheim隧穿電流決定著SiC MOS結(jié)構(gòu)的漏電流,當(dāng)幅照柵偏壓為高的正電壓時(shí),電離幅照對(duì)SiC MOS電容的影響會(huì)更明顯,SiC MOS器件比Si器件具有好的抗輻照的能力,在58kGy(Si)的輻照劑量下,其平帶電壓漂移不超過(guò)2V。
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關(guān)鍵詞:
- SiC MOS結(jié)構(gòu); 輻照; 平帶電壓; 退火
Abstract: The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment. It is found that the main electronic conduction mechanism in the high field regions of the I-V characteristics is identified to be Fowler-Nordheim tunneling. The fact that ionization radiation effect becomes more notable at high oxide electric field indicates that the generation of radiation induced charge-centers near SiC/SiO2 interface and in gate oxide under high electric field is higher than that under low electric field. SiC MOS structure has a more significant tolerance to y rays than Si MOS structure. Flatband voltage shift of SiC MOS capacitor is less than 2V under radiation of 58kGy(Si). -
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