基于憶阻的全功能巴甫洛夫聯(lián)想記憶電路的設計、實現(xiàn)與分析

董哲康; 錢智凱; 周廣東; 紀曉悅; 齊冬蓮; 賴俊升

doi:10.11999/JEIT210376

基于憶阻的全功能巴甫洛夫聯(lián)想記憶電路的設計、實現(xiàn)與分析

doi: 10.11999/JEIT210376 cstr: 32379.14.JEIT210376

董哲康^{1, 2},
錢智凱¹,
周廣東³,
紀曉悅^2, ,,
齊冬蓮²,
賴俊升⁴

1.
杭州電子科技大學電子信息學院杭州 310018
2.
浙江大學電氣工程學院杭州 310027
3.
西南大學人工智能學院重慶 400715
4.
英國倫敦布魯奈爾大學電子與計算機工程系倫敦 UB8 3PH

基金項目: 國家自然科學基金(62001149)，浙江省自然科學基金(LQ21F010009)

詳細信息

作者簡介:
董哲康：男，1989年生，副教授，研究方向為憶阻理論、基于憶阻神經(jīng)形態(tài)系統(tǒng)

錢智凱：男，1996年生，碩士生，研究方向為憶阻理論、基于憶阻神經(jīng)形態(tài)系統(tǒng)

周廣東：男，1986年生，教授，研究方向為憶阻制備及其物理機制研究、基于憶阻神經(jīng)形態(tài)系統(tǒng)

紀曉悅：女，1993年生，博士生，研究方向為憶阻理論、基于憶阻器的神經(jīng)形態(tài)系統(tǒng)

齊冬蓮：女，1973年生，教授，研究方向為憶阻器理論、基于憶阻器的非線性系統(tǒng)

賴俊升：男，1991年生，助理教授，研究方向為非線性系統(tǒng)、神經(jīng)形態(tài)系統(tǒng)

通訊作者:
紀曉悅　ji.xiaoyue@zju.edu.cn

中圖分類號: TN601; TP183
計量
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- 被引次數(shù): 0
出版歷程
- 收稿日期: 2021-04-30
- 修回日期: 2021-08-26
- 網(wǎng)絡出版日期: 2021-09-15
- 刊出日期: 2022-06-21

Memory Circuit Design, Implementation and Analysis Based on Memristor Full-function Pavlov Associative

1.
School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China
2.
College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China
3.
School of Artificial Intelligence, Southwest University, Chongqing 400715, China
4.
Department of Electronic and Computer Engineering, Brunel University London, London UB8 3PH, United Kingdom

Funds: The National Natural Science Foundation of China (62001149), Natural Science Foundation of Zhejiang Province (LQ21F010009)

摘要

摘要: 聯(lián)想記憶是一種描述生物學習和遺忘過程的重要機制，對構(gòu)建神經(jīng)形態(tài)計算系統(tǒng)和模擬類腦功能有重要的意義，設計并實現(xiàn)聯(lián)想記憶電路成為人工神經(jīng)網(wǎng)絡領(lǐng)域內(nèi)的研究熱點。巴甫洛夫條件反射實驗作為聯(lián)想記憶的經(jīng)典案例之一，其硬件電路的實現(xiàn)方案仍然存在電路設計復雜、功能不完善以及過程描述不清晰等問題?；诖?，該文融合經(jīng)典的條件反射理論和納米科學技術(shù)，提出一種基于憶阻的全功能巴甫洛夫聯(lián)想記憶電路。首先，基于水熱合成法和磁控濺射法制備了Ag/TiO_x nanobelt/Ti結(jié)構(gòu)的憶阻器，通過電化學工作站、四探針測試臺和透射電子顯微鏡聯(lián)合完成相應的性能測試；接著，利用測試得到的電化學數(shù)據(jù)，構(gòu)建了Ag/TiO_x nanobelt/Ti憶阻器的數(shù)學模型和SPICE電路模型，并通過客觀評價驗證模型的精確度；進一步，基于提出的Ag/TiO_x nanobelt/Ti憶阻器模型，設計了一種全功能巴甫洛夫聯(lián)想記憶電路，通過電路描述和功能分析，論述了該電路能夠正確模擬巴甫洛夫?qū)嶒炛?類學習過程和3類遺忘過程；最后，通過一系列計算機仿真和分析，驗證了所提方案的正確性和有效性。
- 憶阻器 /
- 聯(lián)想記憶 /
- 巴普洛夫條件反射 /
- 電路實現(xiàn) /
- 性能測試
Abstract: Associative memory is an important mechanism describing biological learning process and forgetting process, which is of great significance for constructing neuromorphic computing systems, as well as simulating brain-like functions. As a result, the design and implementation of associative memory circuit has become a research hotspot in the field of artificial neural networks. Pavlov conditioning experiment, as one of the classic cases of associative memory, its hardware implementation still suffers from some limitations such as complex circuit configuration, imperfect function and unclear process description. Based on this, a memory circuit is proposed based on memristor full-fuction pavlov associative in this paper, which combines the classical conditioned reflection theory and nano science and technology. Firstly, the Ag/TiO_x nanobelt/Ti memristor is prepared using hydrothermal synthesis method and magnetron sputtering method, and its performance testing is conducted jointly by electrochemical workstation, four-probe test bench, and transmission electron microscope. Then, the mathematical model and SPICE circuit model of the Ag/TiO_x nanobelt/Ti memristor are built up respectively, based on the electrochemical data derived from the performance testing, and the model accuracy is verified by objective evaluation. Furthermore, the proposed Ag/TiO_x nanobelt/Ti memristor model is applied to the implementation of a full-function Pavlovian associative memory circuit. The specific circuit description and function analysis illustrate that this circuit is able to simulate two kinds of learning process and three kinds of forgetting process in Pavlov experiment. Finally, a series of computer simulation and analysis are carried out, which verifies the validity and effectiveness of the entire scheme.
- Memristor /
- Associative memory /
- Pavlov conditioning /
- Circuit implementation /
- Performance testing

HTML全文

圖 1 Ag/TiO_x nanobelt/Ti憶阻器的制備過程

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圖 2 Ag/TiO_x nanobelt/Ti憶阻器的性能測試

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圖 3 Ag/TiO_x nanobelt/Ti憶阻器建模

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圖 4 基于憶阻的全功能巴甫洛夫聯(lián)想記憶電路

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圖 5 情況1(初始狀態(tài))的電路仿真結(jié)果

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圖 6 情況2(L₁)的電路仿真結(jié)果

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圖 7 情況3(F₁)的電路仿真結(jié)果

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圖 8 情況4(L₁)的電路仿真結(jié)果

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圖 9 情況5(F₂)的電路仿真結(jié)果

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圖 10 情況6(L₂)的電路仿真結(jié)果

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圖 11 情況7(F₃)的電路仿真結(jié)果

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表 1 巴甫洛夫聯(lián)想記憶電路的對比信息匯總

性能	文獻[7]	文獻[8,9,12,13]	文獻[10,11]	文獻[14]	文獻[15]	文獻[16]	文獻[17,18,19]	本文工作
實物支撐	有	有	有	無	無	無	無	有
功能完備性	一類學習無遺忘	一類學習一類遺忘	一類學習一類遺忘	一類學習無遺忘	兩類學習一類遺忘	兩類學習兩類遺忘	兩類學習三類遺忘	兩類學習三類遺忘
電路復雜度	簡單	簡單	簡單	中等	復雜	中等	復雜	中等
生物特性	無	無	有	無	無	無	無	有

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表 2 Ag/TiO_x nanobelt/Ti憶阻器SPICE模型子電路描述

* Ag/TiOx nanobelt/Ti memristor
.SUBCKT IJBCMEM Plus Minus PARAMS:
+kL=-6 AlphaL=2 aL=-1 wL=2 a1=0.22 b1=-0.38 c1=0.166 d1=9.96E-05 kH=3E-3 AlphaH=4 aH=-1 wH=1
+a2=0.22 b2=-10 b2=-10 c2=8.15 d2=3E-08 Vth1=0 Vth2=0
**************Differential equation mode*************
Gx 0 x value={F(V(x),V(Plus,Minus),aL,aH,wL,wH,kL,kH,AlphaL,AlphaH)}
Cx x 0 1 IC={0}
Raux x 0 1T
*********************Ohms law*********************
Gm Plus Minus value={IVRel(V(x),V(Plus,Minus),a1,a2,b1,b2,c1,c2,d1,d2)}
*********************Functions*********************
.func f1(x,v,kL,AlphaL,aL,wL)={kLv^AlphaLexp(-exp(aL*x+wL))}
.func f2(x,v,kH,AlphaH,aH,wH)={kHv^AlphaHexp(-exp(aH*x+wH))}
.func f3(x,v,a1,b1,c1,d1)={a1xexp(b1x^3+c1)sinh(d1*(v)^3)}
.func f4(x,v,a2,b2,c2,d2)={a2xexp(b2x^3+c2)sinh(d2*(v)^3)}
.func F(x,v,aL,aH,wL,wH,kL,kH,AlphaL,AlphaH)={if(v<Vth1,f1(x,v,kL,AlphaL,aL,wL),
+if(v>Vth2,f2(x,v,kH,AlphaH,aH,wH),0))}
.func IVRel(x,v,a1,a2,b1,b2,c1,c2,d1,d2)={if(v<Vth1,f3(x,v,a1,b1,c1,d1),if(v>Vth2,f4(x,v,a2,b2,c2,d2),0))}
ENDS Ag/TiOx nanobelt/Ti memristor

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表 3 巴甫洛夫聯(lián)想記憶信息匯總

學習過程	遺忘過程




	/　　　　　　　　/　　　　　　　　/

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