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諧振式微型電場傳感器芯片級真空封裝及測試

諧振式微型電場傳感器芯片級真空封裝及測試[J]. 電子與信息學(xué)報(bào), 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105
引用本文: 諧振式微型電場傳感器芯片級真空封裝及測試[J]. 電子與信息學(xué)報(bào), 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105
Chip-level Vacuum Package and Test of Resonant MEMS Electric Field Sensor[J]. Journal of Electronics & Information Technology, 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105
Citation: Chip-level Vacuum Package and Test of Resonant MEMS Electric Field Sensor[J]. Journal of Electronics & Information Technology, 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105

諧振式微型電場傳感器芯片級真空封裝及測試

doi: 10.11999/JEIT150105 cstr: 32379.14.JEIT150105
基金項(xiàng)目: 

國家自然科學(xué)基金(61101049, 61327810)

Chip-level Vacuum Package and Test of Resonant MEMS Electric Field Sensor

  • 摘要: 為了降低傳感器的驅(qū)動電壓，提高該器件的品質(zhì)因數(shù)和信噪比，該文研究封裝材料和工藝對真空封裝性能的影響，針對一種微機(jī)電系統(tǒng)(MEMS)諧振式微型電場敏感結(jié)構(gòu)芯片，采用獨(dú)特的共晶鍵合技術(shù)，實(shí)現(xiàn)該傳感器的芯片級真空封裝。實(shí)驗(yàn)結(jié)果表明，該傳感器封裝后的品質(zhì)因數(shù)達(dá)到了30727.4，是常壓封裝的500倍；該封裝器件具有更低的驅(qū)動電壓，只需要直流分量100 mV和交流分量60 mVp-p，與常壓測試時(shí)相比，分別只有原來的1/200和1/16。
    Abstract: In order to improve the Q (Quality factor) value and SNR (Signal to Noise Ratio) and reduce the driving voltage, chip-level vacuum package of Micro-Electro-Mechanical Systems (MEMS) based resonant miniature electric field sensor is realized. By way of a novel fusion bonding process with nanogetter added, the package cap is successfully bonded with the base substrate in very low pressure. The experimental results show that the Q-value of the sensor increases 500 times to 30727.4 and the driving voltage reduces to 100 mV +60 mVp-p which decreases to 1/200 and 1/16 respectively compared to air pressure.
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    Yang Peng-fei, Peng Chun-rong, Zhang Hai-yan, et al.. Design and testing of a SOI Electric-field Microsensor[J]. Journal of Electronics Information Technology, 2011, 33(11): 2771-2774.
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出版歷程
  • 收稿日期:  2015-01-20
  • 修回日期:  2015-04-14
  • 刊出日期:  2015-09-19

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