重?fù)诫s發(fā)射區(qū)中禁帶寬度和少子復(fù)合壽命的確定方法
A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER
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摘要: 禁帶寬度和少子復(fù)合壽命是硅晶體管發(fā)射區(qū)中重要的物理參數(shù)。本文利用p-n結(jié)反向擴(kuò)散電流的溫度特性和借助于線性外推法,提出了一種確定絕對(duì)零度時(shí)禁帶寬度的新方法。由于發(fā)射區(qū)重?fù)诫s,本文考慮了載流子的費(fèi)米-狄拉克統(tǒng)計(jì)分布。提出了確定發(fā)射區(qū)中少子復(fù)合壽命的方法。該方法簡便實(shí)用。
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關(guān)鍵詞:
- 重?fù)诫s發(fā)射區(qū); 禁帶寬度; 少子復(fù)合壽命
Abstract: Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at 0K is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method is simple and can be used in practice. -
J. W. Slotboosn, et al., Solid-State Electron., 19(1976), 857-862.[2]G. E. Possin, et al., IEEE Trans. on ED, ED-27(1980), 983-990.[3]N. D. Arora, et al., Appl. Phys. Lett., 37(1980), 325-327.[4]D. J. Roulston, et al., IEEE Trans. on ED, ED-29(1982), 284-291.[5]C. H. Henry, et al., Phys. Rev., B15(1977), 989-1016.[6]N. D. Arora, et al., IEEE Trans. on ED, ED-29(1982), 292-295.[7]J. Dziemior, et al., Appl. Phys. Lett., 31(1977), 346-350. -
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