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MIM隧道發(fā)光二極管的電子輸運研究

俞建華,  孫承休,  王啟明

俞建華, 孫承休, 王啟明. MIM隧道發(fā)光二極管的電子輸運研究[J]. 電子與信息學報, 2000, 22(1): 144-150.
引用本文: 俞建華, 孫承休, 王啟明. MIM隧道發(fā)光二極管的電子輸運研究[J]. 電子與信息學報, 2000, 22(1): 144-150.
Shu Jianhua, Sun Chengxiu, Wang Qiming. THE RESEARCH OF ELECTRON TRANSFER IN MIM LIGHT EMISSION TUNNEL DIODE[J]. Journal of Electronics & Information Technology, 2000, 22(1): 144-150.
Citation: Shu Jianhua, Sun Chengxiu, Wang Qiming. THE RESEARCH OF ELECTRON TRANSFER IN MIM LIGHT EMISSION TUNNEL DIODE[J]. Journal of Electronics & Information Technology, 2000, 22(1): 144-150.

MIM隧道發(fā)光二極管的電子輸運研究

THE RESEARCH OF ELECTRON TRANSFER IN MIM LIGHT EMISSION TUNNEL DIODE

  • 摘要: 本文報道了MIM隧道二極管的發(fā)光和負阻現(xiàn)象,用梯形勢壘計算了電流-電壓特性。結(jié)果顯示,由于SPP波對電子的阻擋和束縛作用引起的勢壘平均寬度的增加所導(dǎo)致的負阻現(xiàn)象與實驗結(jié)果相符合。
    Abstract: This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-V characteristic curve. By building the trapezoid potential barrier model and calculating the numerical solution of I-V characteristic curve with computer, it is found that the increment of potential barrier average width is agree with the experiment well. This increment of potential barrier average width is caused by the SPP s impeding and trapping effect upon tunneling electrons.
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  • Lambe J，McCarthy S L．Light emission from inclastic electron tunneling Phys．Rev Lett.,1976：37(14)：923-926．[2]Troyan P E, Lubsanov R B, Vorobyev G A，et al Flat dusplay based on the metal-insulator-metal emitter array．J．Vac．Sci．Technol．B．1993, 11(2)：514-517[3]Raymond S，Van Hoof C，Geone J，et al Resonant tunneling light-emitting diode as an optical switch Electron. Lett.,1993，29(14)：1301-1302．[4]Akazawa M，Ameimiya Y.Directional single-electron-tunneling junction Jpn[J].J Appl Phys.1996,35(Part l，No．6 A):3569-3575[5]Ito K, Ohygrma S, Uehara Y, et al STM light emission spectroscopy of surface micro-structures on granular Au films. Surface Science，1995, 324(2／3)：282-288．[6]Hoofring A B，Kapoor V J，Krawczonek W．Submicron nickel-oxide-gold tunnel diode detectors for rectennas. J．Appl．Phys.,1989，66(1): 430-437．[7]Mills D L, Weber M，Laks B．Light Emission from Tunnel Junctions．In Tunneling Spectroscopy.edited by Hansma P K，New York：Plcnum，1982，121-15l[8]Szentirmay Z．Surface plasmon assisted clection-photon interaction in metal-oxide-metal layered structures Prog．Quant．Electr，1991．15(3)：175-230[9]張佑文，孫承休，高中林，孫日俊．金屬／絕緣體／金屬隧道結(jié)的粗糙度與發(fā)光光譜的關(guān)系．電子學報。1997, 25(5)：25-28。[10]Schiff L I Quantum Mechanics，3rd cd.,New York：McGraw-Hill Book Company；1968：chap.8.[11]Kittle C Introduction to Solid State Physics，6th edition，New York：John Wiley Sons：Inc.,1986：134．[12]Sze S M．Physics of semiconductor Devices, 2nd edition，New York：John Wiley Sons；1981，396[13]馬文淦，林趾榮，張桂根，等．金屬勢壘參數(shù)與上電極的相關(guān)性，物理學報，1991：40(3)：483-488.
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出版歷程
  • 收稿日期:  1998-06-01
  • 修回日期:  1999-01-23
  • 刊出日期:  2000-01-19

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