平面薄膜場致發(fā)射的模型分析
MODEL STUDY OF FEE FROM PLANAR FILMS
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摘要: 該文系統(tǒng)地討論寬帶隙平面薄膜的場致電子發(fā)射(FEE)的機理?；镜睦碚撃Ｐ褪请娮訉Ρ砻鎰輭镜乃泶┬?同時考慮到晶格的散射和薄膜勢壘中微細貫穿通道的電子發(fā)射作用。分析結果表明,寬帶隙平面薄膜結構用作場致電子發(fā)射陰極,具有發(fā)射電壓的閾值低,發(fā)射電子的能量分布范圍小等優(yōu)點。另外這種結構制作簡單、材料選擇范圍寬、理化穩(wěn)定性好,是一種理想的場致發(fā)射電子源。
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關鍵詞:
- 薄膜; 場致發(fā)射; 模型
Abstract: The mechanics of Field Electron Emission (FEE) from planar thin films of wide band-gap have been studied systematically. The basic model is the electron tunneling through the potential barriers at the interfaces, on the other hand the effect of scattering of the crystal lattice and the effect of micro conductive channel on FEE have been taken into consideration. The study result shows that the planar film structure is conformable for FEE cathode, because it has low voltage threshold and small range of energy distribution of the emitted electrons. Since the structure can be easily prepared, and its components are widely selectable, and its surface stability in mechanics and chemistry is outstanding, this structure is an ideal electron emitter. -
Y. Glazer, M. Gitterman, Tunneling through highly transparent symmetric double barriers, Physical Review B, 1991, 43(2), 1855-1858.[2]De-Chang Li, G. J. Liu, Y. T. Yang, et al., The resonant field electron emission from DLC films,Ultramicroscopy, 1999, 79(1999), 83-87.[3]L. Yunpeng, L. Enze, Space charge of field emission triode, Applied Surface Science, 1994,76/77(1994), 7 10.[4]M. Abramowitz, I. A. Stegun, Handbook of Mathematical Functions with Formulas, Graphs, and Mathematical Tables, National Bureau of Standards, 1964, 446-464.[5]M.W. Geis, J. C. Twichell, N. N. Efremov, et al., Comparison of Electron Field Emission from Nitrogen-doped, Type b Diamond, Boron-doped Diamond, Appl. Phys. Lett., 1996, 68(16),2294-2296. -
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