JFET壓磁電效應(yīng)的理論分析
THEORETICAL ANALYSIS OF THE PRESSURE-MAGNETOELECTRIC EFFECT OF JFET
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摘要: 本文用標(biāo)準(zhǔn)的松弛方法研究了結(jié)型場效應(yīng)晶體管的壓磁電效應(yīng)。利用準(zhǔn)平面拉普拉斯方程及有限差分法計(jì)算了不同柵電壓、漏電壓以及n溝道硅器件不同寬長比的壓力靈敏度和磁靈敏度。在P0,B=0,器件寬長比為W/L=1/2-1時(shí),電流性壓力靈敏度約為:2.5％cm2/N。據(jù)此,提出了一種有良好工作穩(wěn)定性及噪聲性能的力學(xué)量敏感器件結(jié)型場效應(yīng)力敏管(Junction field effect-pressure sensor)。
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關(guān)鍵詞:
- JFET壓阻效應(yīng); 壓磁電效應(yīng); 松弛方法; 有限差分法
Abstract: The pressure-magnetoelectric effect of JFET is discussed by using standard relaxation techniques. A theoretical evaluation of the pressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries (W/L), gate voltages (VGS) and drain voltages (VDS) is made. The results show that when P0,B0, the current-pressure sensitivity is about 2.5%cm2/N, supposing W/L = 1/2-1. A junction field effect-pressure sensor with high stability and low noise is designed. -
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