InGaAsP/InP雙異質(zhì)結發(fā)光管中的深能級
DEEP LEVEL IN InGaAsP/InP DH LED
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摘要: 本文用DLTS譜儀研究了SiO2限制的InGaAsP/InP雙異質(zhì)結發(fā)光管中的深能級。結果表明:只有在p-n結位于p-InP/n-InGaAsP界面處的個別器件中,有△E=0.24eV的多子陷阱。Abstract: The deep level in InGaAsP/InP DH LED have been studied by DLTS method. The results show that when the p-n junction located in the interface of the p-InP/n-In GaAsP, there is deep level in some InGaAsP/InP DH LED. The activation energy △E is 0.24eV.
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