GaAlAs/GaAs雙異質(zhì)結(jié)發(fā)光管中的深能級
STUDY OF DEEP LEVELS IN Ga_(1-x)AlxAs/GaAs DH LEDs
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摘要: 本文用DLTS譜儀和單脈沖瞬態(tài)電容技術(shù)測量了光通信用GaAlAs/GaAs雙異質(zhì)結(jié)發(fā)光管中的深能級,對有源區(qū)摻Si和摻Ge的相同結(jié)構(gòu)器件,均測得有多子陷阱存在,其能級位置分別為EC-ED0.29eV和ET-EV0.42eV。比較了外延系統(tǒng)中氧含量變化對有源區(qū)摻Si器件深能級的影響,以及有源區(qū)EL圖象中的DSD與深能級關(guān)系,結(jié)果表明外延系統(tǒng)中氧含量對深能級有明顯影響,而EL圖象中DSD的出現(xiàn)率與深能級無明顯關(guān)系。
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關(guān)鍵詞:
- 發(fā)光管; GaAlAs/GaAs雙異質(zhì)結(jié); 深能級
Abstract: Deep levels in Ga1-xAlxAs/GaAs double-heterojunction LEDs have been studied by DLTS. The Ga1-xAlxAs DH material was grown by LPE technique. The dark deitcts are ob-jerved with an infrared line scanner. The effect of the oxygen contamination on the deep levels in Si-doped active layer is found. The activation energy EC-ED0.29 eV. The DSD are sometimes generated in the emitting area. It did not related to the deep levels obviously. -
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