多晶硅發(fā)射極晶體管的低溫頻率特性研究
INVESTIGATION OF LOW TEMPERATURE FREQUENCY CHARACTERISTICS OF POLYSILICON EMITTER BIPOLAR TRANSISTORS
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摘要: 本文考慮低溫下半導(dǎo)體中載流子凍析效應(yīng)和淺能級(jí)雜質(zhì)的陷阱效應(yīng)等因素,分析了多晶硅發(fā)射極晶體管的低溫頻率特性。研究表明,受載流子凍析效應(yīng)的影響,基區(qū)電阻在低溫下隨溫度下降接近于指數(shù)上升,使晶體管的頻率性能變環(huán);而由于淺能級(jí)雜質(zhì)的陷阱效應(yīng),低溫下基區(qū)和發(fā)射區(qū)渡越時(shí)間變長,截止頻率下降。這些因素在低溫器件設(shè)計(jì)中應(yīng)予重視。
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關(guān)鍵詞:
- 雙極晶體管; 多晶硅發(fā)射極; 截止頻率; 低溫頻率特性
Abstract: The low temperature frequency characteristics of polysilicon emitter bipolar transistors are investigated, considered the carrier freezingout effect and trapping effect of shallow energy impurities in semiconductors. It shows that the base sheet resistance Rdb increases quasi-exponentially at low temperature due to carrier freezingout, which results in the degradation of frequency characteristics of the transistors at low temperature. The base and emitter transit time increase and the cutoff frequency decreases at low temperature due to the trapping effect of shallow energy level impurities. Those should be considered carefully in the design of devices for low temperature operation. -
Kapoor A K, et al. Polysilicon Emitter Bipolar Transistors. New York: IEEE Press. 1989. 3-16.[2]黃流興,等.電子科學(xué)學(xué)刊,1994,16(2):207-211.[3]Yu Z, et al. IEEE Trans. on ED, 1984. ED-31(6): 773-784.[4]Selberherr S. In: Raider S I, et al. ed, Proc. Symp. Low Temperature Electronics and High[5]Temperature Superconductors, 1988, 70-86.[6]Van den Biesen I J. Solid State Electronics, 1986, 29(5): 529-534.[7]Suzuki K. IEEE Trans. on ED, 1991, ED-38(11): 2512-2518.[8]Dumke W P. IEEE Trans. on ED, 1970, ED-17(4): 388-389.[9]鄭茳,等.固體電子學(xué)研究與進(jìn)展,1991,11(1): 33-37. -
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