TEM分析用的半導(dǎo)體橫截面樣品的制備和分析的結(jié)果
PREPARATION OF CROSS-SECTIONAL SPECIMEN OF SEMICONDUCTOR FOR TEM AND ANALYTICRESULTS
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摘要: 本文介紹了透射式電子顯微鏡(TEM)用的橫截面樣品的制作技術(shù)。利用這一技術(shù)制出的樣品,用TEM觀察到了GaAs/AlGaAs超晶格結(jié)構(gòu)中周期性的精細(xì)成分調(diào)制的新現(xiàn)象。在金屬有機(jī)化合物汽相沉積(MOCVD)生長(zhǎng)的GaAs/si材料中還觀察到一些新形狀的位錯(cuò)、微孿晶等。這一種制樣技術(shù)也適用于其他半導(dǎo)體材料系統(tǒng)的研究。Abstract: The technique for preparing cross-sectional specimen of semiconductor for TEM is shown. In such specimens prepared with the technique, an unexpected periodic compositional modulation in the fine low-dimensional structure named Fine Low Dimensional Modulated Fringes of GaAs/AlGaAs multilayers grown by MBE are observed. Some new patterns of dislocations, defects and microtwins etc. in GaAs/Si grown by both MBE and MOCVD are remarked. The technology can be adapted to the study of other systems of semiconductor materials also.
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范榮團(tuán),電子科學(xué)學(xué)刊,12(1990)1,93-99.[2]褚一鳴,姜彤弼,范榮團(tuán),電子顯微學(xué)報(bào),7(1988)3,178.[3]范榮團(tuán),MBE,MOCVD外延生長(zhǎng)的GaAs/Si中微孿晶,第三屆全國(guó)材料科學(xué)中電子顯微學(xué)會(huì)議論文集,1989年,11月,四川樂(lè)山,第56-58頁(yè).[4]D. J. Eagesham, et al., Defects in MBE and MOCVD Grown GaAs on Si Inst. Phys. Conf. Ser. No.87,1987, 105-110. -
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