聚甲基丙烯酸甲酯LB膜用作高分辨率電子束抗蝕層的研究
POLYMETHYLMETHACRYLATE LANGMUIR BLODGETT FILMS FOR HIGH RESOLUTION ELECTRON BEAM RESIST
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摘要: 應(yīng)用LB技術(shù)制備了厚度為20100nm的聚甲基丙烯酸甲酯(PMMA)超薄高分辨率電子束抗蝕層。應(yīng)用改裝的日立S-450掃描電子顯微鏡(SEM),研究了PMMALB膜的曝光特性和刻蝕條件。結(jié)果得到線寬0.15m的鋁掩模光柵圖形,表明此種超薄膜具有良好的分辨率和足夠的抗蝕性。Abstract: Ultra-thin (20-100nm) polymethylmethacrylate (PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 scanning electron microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15um lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20-nm aluminum film suitable for mask fabrication.
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