硅CVD外延自摻雜效應(yīng)的分析研究
RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY
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摘要: 本文首先對(duì)自摻雜機(jī)理進(jìn)行了分析。并采用反向補(bǔ)償原理,吸附-解吸、滯流層靜態(tài)-動(dòng)態(tài)轉(zhuǎn)換等,對(duì)工藝進(jìn)行優(yōu)化,在通常條件下有效地控制了自摻雜。
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關(guān)鍵詞:
- 硅; 反向補(bǔ)償; CVD; 外延; 自摻雜
Abstract: This paper, first, analyzes self-doping mechanism, then develops an optimization technology by using the contrary compensation principle, adsorption-desorption mechanism and transform of viscous flow layer between static and dymanic conditons. It results in controlling efffectively self-doping under normal condition. -
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