激光觸發(fā)光導(dǎo)開關(guān)產(chǎn)生超短電磁脈沖的實驗研究
AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
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摘要: 本文介紹了用光導(dǎo)開關(guān)和微帶線結(jié)構(gòu)產(chǎn)生電脈沖的實驗裝置,研究了激光能量和偏置電壓對光導(dǎo)開關(guān)輸出超短電脈沖的影響和三種尺寸光導(dǎo)開關(guān)的特性,測得了一種低摻雜Cr:GaAs材料的載流子壽命約為1.8ns,顯示了這種裝置用作高速光探測器的可能性。
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關(guān)鍵詞:
- 光導(dǎo)開關(guān); 激光脈沖; 超短電脈沖; 載流子壽命; 高速光探測器
Abstract: By using the apparatus given in this paper the experiment on photo-conductive switches was conducted to investigate the affection of both the laser energy and bias voltage on switch output. By means of the same set-up, the carrier lifetime of Cr: GaAs used was measured to be as 1.8ns, and the possibility of the set-up to be utilized as a high speed photodetector has been demonstrated. -
郭開周.電子科學(xué)學(xué)刊,1993, 15(1): 60-68.[2]Hadizad P, Hur J H, et al. J. Appl. Phys., 1992, 71(7): 3586-3592.[3]Eiichi Sano, Tsugumichi Shibata. IEEE J, of QE, 1990, QE-26(2): 372-399.[4][4][5]李學(xué)清,郭開周,陳增圭.電子科學(xué)學(xué)刊,1993, 15(3): 201-203.[6]李學(xué)清,郭開周,周權(quán).電子學(xué)報,1993, 21(9): 20-26, 48.[7]Lee Chi H. IEEE Trans. on ED, 1990, ED-37(12): 2426-2938.[8]Paulus P, Brinker W, Jager D. IEEE J. of QE, 1986, QE-22(1): 108-111.[9]Zutavern Fred J, et al. IEEE Trans. on ED, 1991, ED-38(4): 696-700. -
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