GaAs中的低溫Zn擴(kuò)散
THE DIFFUSION OF Zn IN GaAs AT LOW TEMPERATURE
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摘要: 本文研究了低溫條件下Zn向GaAs中的擴(kuò)散。實(shí)驗(yàn)是用ZnAs2源在抽真空的石英管中進(jìn)行的。研究了結(jié)深Xj,擴(kuò)散溫度T和擴(kuò)散時(shí)間t的關(guān)系。結(jié)果表明,表面層電阻Rs隨Xj,的增加而降低;表面濃度Cs隨1/T的增加而降低;遷移率隨Cs的增加而降低。將Cs對(duì)1/(RsXj)作圖表明,Cs隨1/(RsXj)的增加而增加。這一關(guān)系可作為判斷多層GaAlAs/GaAs外延層擴(kuò)Zn后表面濃度的簡(jiǎn)便方法。文中討論了Zn在GaAs和InP中的擴(kuò)散機(jī)理,比較了Zn在InP和GaAs擴(kuò)散層中的參數(shù)。 該擴(kuò)散工藝可獲得表面光亮、無(wú)損傷的高濃度表面層,并已在GaAs/Ga1-xAlxAs雙異質(zhì)結(jié)發(fā)光管的制備工藝中應(yīng)用。制得了光輸出功率為24mW、串聯(lián)電阻為35、壓降為2.4V的GaAs/Ga1-xAlxAs雙異質(zhì)結(jié)發(fā)光管。
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關(guān)鍵詞:
Abstract: In this report the diffusion of Zn into GaAs at low temperature has been investigated. The experiments are accomplished in an evacuated and sealed quartz ampoule using ZnAs2 as the source of Zn.The relation among the junction depth (Xj), the time (t) and the temperature (T) of diffusion has been investigated. It is found that the sheet resistance (Rs) of diffu-sion layer increases as the junetion depth (Xj) decreases, the surface concentration (C2) decreases as 1/T increases and the carrier mobility () decreases as Cs increases. The Cs vs. 1/XjRs is plotted, it indicates that the Cs increases as 1/(XjRs) inereases. This is a simple method for determining the Cs of the multiple Ga1-xAlxAs/GaAs epitaxial layer. The mechanism of Zn diffusion in GaAs and InP is discussed. This process has been applied to fabricate GaAlAs/GaAs double heterojunction light emitting idodes and an output power of 2-4 mW and a series resistance of 3-5 are obtained. -
H. C. Casey,Trans.AIME, 242(1968), 406.[5]上海無(wú)線電十九廠,復(fù)旦大學(xué),半導(dǎo)體集成電路工藝(上冊(cè)),1971年,第145頁(yè).[6]L. Kenneth, J. Electrochem. Sec., 116(1969), 507.[8]張桂成等,半導(dǎo)體光電,1981年,第2期,第189頁(yè).[9]P. K. Tien, et al., Appl. Phys. Lett., 34(1979), 701.[11]潘慧珍等,電子學(xué)通訊,3(1981), 22. -
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