硅低溫本征載流子濃度的計(jì)算
CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE
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摘要: 本文提出了低溫區(qū)高精度的禁帶寬度的表達(dá)式,獲得了低溫區(qū)本征載流子濃度的簡(jiǎn)明公式。考慮到禁帶變窄效應(yīng)的作用,本文導(dǎo)出了重?fù)诫s硅中本征載流子濃度與溫度和雜質(zhì)濃度的關(guān)系式。與常溫情況相比,低溫下本征載流子濃度將隨雜質(zhì)濃度的上升更為劇烈地上升。
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關(guān)鍵詞:
- 硅半導(dǎo)體; 禁帶寬度; 本征載流子濃度; 低溫特性
Abstract: A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented. The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained, under the consideration of the narrowing effect of the bandgap at the heavy doping level. It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low temperature than at room temperature. -
F. H. Gaensslen et al., IEEE Trans. on ED, ED-34(1987)1, 1-134.[2]F. H. Gaensslen et al., IEEE Trans. on ED, ED-36(1989)8, 1404-1544.[3]易明銳,半導(dǎo)體學(xué)報(bào),8(1987)4,391-394.[4]W. Blaudau et al., J. Appl. Phys., 45(1974)4,1846-1848.[5]S. E. Swithuri et al., Temperature dependence of minority electron mobility and bandgap narrowing in p+Si, Digest of IEDM (1988), IEEE Press, USA, pp. 298-301.[6]J. W. Slotboom et al., Solid-statet Electronics, 19(1976)10, 857-862.[7]J.Wanger et al.,J. Appl, Phys., 63(1988)2, 425-429.[8]Y.P. Varshid, Physica, 34(1967)1, 149-153. -
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