高能離子注入硅的無損表征
NON-DESTRUCTIVE CHARACTERIZATION OF MeV ION IMPLANTED SILICON
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摘要: 將能量為3MeV,劑量為51015cm-2的硼離子注入(100)硅單晶,經(jīng)1050℃,20s退火形成導電埋層。本文應用X-射線雙晶衍射分析高能離子注入硅的損傷演變。通過分析高能離子注入體系和自由載流子等離子體效應的光學響應,應用計算機模擬紅外反射譜,獲得了載流子分布,遷移率和高能注入離子的電激活率。
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關(guān)鍵詞:
- 高能; 離子注入; 無損表征; 硅
Abstract: Boron ions have been implanted into Si at an incident energy of 3MeV to a dose of 51015cm-2. Buried conductive layers are formed in Si substrate after annealing at 1050℃ for 20s. Annealing characteristics of damage has been examined by double-crystal X-ray diffraction. By detailed theoretical analysis of character of high energy ion implantation and optical response of free-carrier plasma effects, electrical activaton of implanted boron ions has been investigated by computer simulation of the IR reflection interference spectra. -
Borland J, Koelsch R. Solid State Technology, 1993 36(12): 28-36.[2]Yu Yuehui, et al. Appl[J].Surf. Sci.1989, 40:145-150 -
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