高速半導(dǎo)體激光二極管的微波特性研究
THE STUDY OF THE MICROWAVE CHARACTERICTICS OF THE HIGH SPEED SEMICONDUCTOR LASER DIODE
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摘要: 本文通過測試器件的微波S參量,對半導(dǎo)體量子阱激光二極管的微波特性進行了深入的研究。在計及器件本身特性以及器件在微波頻率下的寄生參量的前提下給出了器件微波等效電路和相應(yīng)的數(shù)字模擬方法。由測量出的微波S11參量建立適當(dāng)?shù)哪繕?biāo)函數(shù),選擇正確的計算方法,成功地模擬出電路各參量。實際計算結(jié)果與測出的器件S11參量比較,表明我們給出的等效電路是正確的,相應(yīng)的計算方法是成功的。
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關(guān)鍵詞:
- 高速激光二極管; 數(shù)字模擬; 微波等效電路
Abstract: This paper presents a deep researching of the microwave characteristics of a quantum well laser diode with the diode s microwave S parameters. By considering the characteristics and microwave packing effects of the device, a microwave equivalent circuit of the semiconductor quantum well laser and the numerical analogous methods for it are proposed. By devoloping a proper object function and selecting a correct calculation method, the element parameters of the circuit are succesfully simulated under the measured microwave S11 parameters. By comparing the calculated results and the measured ones, it shows that presented equivalent circuit is correct and the calculation method is effective. -
Giasi A, Gopinath A, IEEE Trans. on MTT. 1990. MTT-38(3): 673-675.[2]Bercel T, ef al. IEEE Trans. on MTT. 1992. MTT-40(5): 910-915.[3]Lau K Y, et al. IEEE. J. of QE, 1985, QE-21(2): 121-138.[4]Su C B, et al. IEEE J. of QE. 1986, QE-22(9): 1566-1578.[5]Maeda M, et al. IEEE Trans on COM, 1978,COM-36(7): 1076-1081.[6]蔡宜三.最優(yōu)化與最優(yōu)控制.北京:油華大學(xué)出版社,1982,第六章,236-297. -
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