InP上Al膜的陽(yáng)極氧化及其特性研究
STUDY OF THE ANODIZATION OF Al FILM ON InP SUBSTRATE AND ITS PROPERTIES
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摘要: 本文報(bào)道了半導(dǎo)體InP上Al膜陽(yáng)極氧化的研究,并用AES,V-V,DLTS和橢圓儀等測(cè)試方法研究了氧化膜的穩(wěn)定性、電學(xué)特性、組分的縱向分布以及Al2O3/InP的界面特性,研究結(jié)果表明,陽(yáng)極氧化Al2O3的介電常數(shù)為11～12,Al2O3/InP界面存在一個(gè)能量上連續(xù)分布的電子陷阱,DLTS峰值對(duì)應(yīng)的能級(jí)位置約在Ec-Ec=0.5eV,其俘獲截面約為10-15cm2,Al2O3/InP的界面態(tài)密度為1011cm-2eV-1。陽(yáng)極氧化Al2O3的穩(wěn)定性要比InP自身氧化物好得多,更適于用作器件的鈍化保護(hù)和擴(kuò)散掩蔽膜。
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關(guān)鍵詞:
- 半導(dǎo)體界面; 陽(yáng)極氧化; 介質(zhì)薄膜
Abstract: The anodization of Al film on InP substrate and the properties of anodic Al2O3/lnP have been investigated by AES, DLTS, I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has the permitivity of 11-12 and the resistivity of 1.31013 ohm-cm. Interface state density at Al2O3/InP is about 1011cm-2eV-1. DLTS reveals that there is continuously-distributed interface electron traps at Al2O3/lnP interface. Anodic oxide Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator etc. -
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