小型超高頻低噪聲FET放大器的設(shè)計(jì)和性能
DESIGN AND PERFORMANCE OF COMPACT LOW NOICE GaAs MESFET AMPLIFIERS FOR UHF OPERATION
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摘要: 本文報(bào)道了UHF頻段小型低噪聲GaAs MESFET放大器的設(shè)計(jì)考慮、射頻性能和試驗(yàn)結(jié)果。采用特殊的匹配網(wǎng)絡(luò)和CAD技術(shù)使電路達(dá)到小型化和最佳化。設(shè)計(jì)的二級(jí)700MHz和三級(jí)1000MHz放大器均制作在50600.8mm3的陶瓷基片上。其射頻性能分別為:功率增益GP為25dB(最佳29dB)和30dB,噪聲系數(shù)NF低于1.1dB(最佳0.8dB)和1.2dB,帶寬W約為40MHz(3dB)和100MHz(1dB)。用700MHz放大器裝成的衛(wèi)星直播電視接收機(jī),接收?qǐng)D像清晰,伴音音質(zhì)良好。
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關(guān)鍵詞:
Abstract: The design considerations and experimental results of compact low noice GaAs MESFET amplifiers for UHF operation were described in this paper. The miniaturized and optimized circuits were obtained by means of special matching network and CAD technique. Both two-stage unit at 700 MHz and three-stage unit at 1000 MHz were fabricated on 5060 mm2 alumina substrate, and the power gain of 29 and 30 dB, noice figure of 0.8 and 1.2 dB and bandwidth of 40(3 dB) and 100 MHz (1 dB) were obtained, respectively, The satellite direct broadcasting receiver constructed with the 700 MHz GaAs MESFET amplifier has clear pictures and good sound. -
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