多能量離子注入的研究
THE INVESTIGATION OF MULTI-ENERGY IMPLANTATION
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摘要: 本文提出了一種新的多能量離子注入的計(jì)算方法等效面積法。應(yīng)用這一方法可按器件的特殊要求,任意設(shè)計(jì)各種濃度分布。 本文應(yīng)用這一方法,設(shè)計(jì)和計(jì)算了具有矩形雜質(zhì)分布的Si-RAPD器件,具有低一高一低特殊分布的Si-RAPD和具有馬頭型結(jié)構(gòu)的 GaAs M-ESPET器件,IMPATT器件,均得到了較為滿意的結(jié)果。還對用這一方法設(shè)計(jì)新型器件的前景作了預(yù)測,最后把本文的計(jì)算結(jié)果與本納德(R.H.Benhard)(1977)的實(shí)測值作了比較,結(jié)果是令人滿意的。
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關(guān)鍵詞:
Abstract: In this paper, a new calculation method of multienergy implantation i.e., eqivalent area method has been proposed. According to the requirement for designing the specific device, a variety of concentration and implantation energy profile which can be arbitrarily supposed may be obtained by this method. Hence, it is possible to make the thin layer device which has a plane concentration profile.Using this method, the Si-EAPD device which has a rectangular on low-high-low concentration profile and the GaAs-MESFET or Si-IMPATT device which has a horsehead shape concentration profile have been designed and calculated. The calculated results are very satisfying. The prospect of the use of designing new-type device is predicted. The calculated results in this paper coicide with the experimental ones given by R.H.Benhard(1977). -
羅晉生,離子注入物理,1979, P. 522.[2]H. Kanbe and T. Kimura, IEEE Trans. on ED, ED-23(1976), 1337.[3]T. Kaneda, et al.,J.Appl. Phys., 47(1976), 3135.[4]王渭源等,半導(dǎo)體學(xué)報(bào),3(1982)., 493.[5]H. Mish, et al., Fujitsu Sci. and Tech. J., 11(1975)4, 113.[6]王德寧等,物理學(xué)報(bào),29(1980), 1452.[7]王渭源等,科技通訊,1982年,第3期,第90頁.[8]R. H. Benhard, Solid-State Electron., 20(1977)4, 291. -
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