II-VI族半導體特性參數(shù)的三維邊緣元分析
3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS
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摘要: 本文用三維邊緣元方法分析了電導率為張量的有間隙Ⅱ-Ⅵ族半導體材料的散射特性;給出了散射參數(shù)與半導體特性參數(shù)之間的關系曲線并說明了用這些曲線確定Ⅱ-Ⅵ族半導體電特性參數(shù)的方法。該方法直接從泛函變分出發(fā),避開了其它方法中求解有損超薄各向異性介質(zhì)填充波導本征值問題的困難,簡化了求解過程。計算結(jié)果與實驗值的比較證實了本方法具有有效、可靠和精確的特點。Abstract: The scattering characteristics of Ⅱ- Ⅵ semiconductor materials with tensor conductivity resulting of the Hall-effect,filled in waveguide with gaps are analyzed with 3-D edge-element.Some useful curves are given and the procedure of determining mobility and carrier concentration of Ⅱ-Ⅵ semiconductor materials with these curves is described.Since this method starts from the functional variation directly,it avoids the difficulty,met in the other methods,of solving the eigenvalue problem for very thin lossy isotropic dielectric loaded waveguide.The experimental results confirm the effectiveness,reliability and accuracy of the approach.
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Greiner P, Poligone L, Becker C R, Geick R. Contactless measurement of the conductivity of II-VI epitaxial layers by means of the partially filled waveguide method, Appl. Phys., 1992, A55: 279-288.[2]Shanjia Xu, Xinzhang Wu, Greiner P, Becker C R, Geick R, Microwave transmission and reflection of stratified lossy dielectric segment partial filled waveguide, International Journal of Infrared and[3]Millimeter Waves, 1992, 13(4): 569-587.[3] Shanjia Xu, Xingqing Sheng, Greiner P, Becker C R, Geick R, High-order finite-element analysis for scattering charcateristics of II-VI semiconductor materials, Chinese Journal of Infrared and Millimeter Waves, 1992, 12(6): 177-184.[4]Shanjia Xu, Xingzhang Wu, Boege P, Schafer H, Becker C R, Geick R, Scattering characteristics of 3-D discontinuity consisting of semi-conductor sample filled in waveguide, International Journal of Infrared and Millimeter Waves, 1993, 14(10): 2155-2190.[5]Chen C H, Lien C D. The variational principle for non-self-adjoint electromagnetic problems, IEEE Trans. on Microwave Theory and Tech., 1993, MTT-28(8): 878-886. -
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