非晶硅肖特基太陽(yáng)電池的I-V特性分析
THE I-V CHARACTERISTIC ANALYSIS OF SCHOTTKY AMORPHOUS SILICON SOLAR CELLS
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摘要: 本文提出了一種在光照和短路條件下測(cè)量Ni/-Si∶H肖特基結(jié)勢(shì)壘寬度的方法。同時(shí),又在實(shí)驗(yàn)確定的參數(shù)的基礎(chǔ)上,從理論上計(jì)算了在AM1太陽(yáng)光譜照射下Ni/-Si∶H太陽(yáng)電池的I-V曲線。由此得到的非晶硅少子擴(kuò)散長(zhǎng)度的數(shù)值與作者1983年用表面光電壓法(SPV)測(cè)得的是一致的。從計(jì)算結(jié)果出發(fā),著重分析了影響填充因子的各種因素。與實(shí)驗(yàn)對(duì)比可以得出結(jié)論:被測(cè)太陽(yáng)電池的填充因子小是串、并聯(lián)電阻造成的,而不是擴(kuò)散長(zhǎng)度太短的緣故。
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關(guān)鍵詞:
Abstract: The present paper introduces an experimental method for measuring the width of illuminated and short-circuited Ni/a-Si: H Schottky barriers. The current-voltage curves for the Schottky barrier solar cells under AM1, 100 mW/cm2 illumination are caleulated by using the parameters determined by experiments. The diffusion length of holes in a-Si:H obtained from the illuminated I-V curve is consistent with the results measured by the author with the surface photovoltage method in 1983. The factors affeeting the fill factor are analysed on the basis of the calculated results. A comparison of the calculated results to the experiment's reveals that the very low fill factor of the solar cells measured is due to series and shunt resistances rather than the low diffusion length of the holes. -
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