利用光電導(dǎo)開(kāi)關(guān)的光電子相關(guān)測(cè)量
PHOTOELECTRON CORRELATION MEASUREMENT BY PHOTOCONDUCTIVE SWITCHES
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摘要: 本文在實(shí)驗(yàn)的基礎(chǔ)上,提出了光電導(dǎo)開(kāi)關(guān)等效時(shí)變電導(dǎo)的新表達(dá)式。據(jù)此分析了光電導(dǎo)開(kāi)關(guān)在高速脈沖的產(chǎn)生和取樣以及在光電子相關(guān)測(cè)量中的特性。分析的結(jié)果與實(shí)驗(yàn)基本一致,為將來(lái)利用光電子相關(guān)方法測(cè)量電子器件打下了基礎(chǔ)。在實(shí)驗(yàn)中采用較為簡(jiǎn)單的工藝,獲得光電導(dǎo)開(kāi)關(guān)的上升時(shí)間為100ps。相信,只要增加離子轟擊處理,上升時(shí)間可望達(dá)到10ps。Abstract: On the basis of experiments, a new conductive expression of photoconductive switch is proposed. According to this expression, the generation and sampling of high speed pulses, as well as the characteristics of photoelectron correlation measurement are analysed. The analysis agrees with experimental results and will be useful to the electronic measurement by photoelectron correlation method. A rather simple processing of devices is adopted. The rise time of photoconductive switch is 100 ps. It is sure that the rise time may obtain a ten-fold improvement only with ion-bombardment to the substrate.
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D. H. Auston, P. R. Smith, Laser Focus,18(1982), 89-93.[2]D. H. Auston, et al., Appl. Phys. Lett.,37(1980), 371-373.[3]D, H. Auston, Appl. Phys. Lett., 26(1975), 101-103.[4]C. H. Lee, Appl.Phys. Lett., 30(1977), 84-86.[5]P. R. Smith, et al., Appl. Phys. Lett., 38(1981), 47-50. -
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