摻鍺直拉硅片三步退火本征吸除清潔區(qū)形成的研究
THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING
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摘要: 運(yùn)用高溫-低溫-高溫三步退火的本征吸除工藝研究了鍺的存在對(duì)硅片清潔區(qū)形成的影響。發(fā)現(xiàn)直拉硅中雜質(zhì)鍺的存在可促進(jìn)氧的外擴(kuò)散,抑制氧沉淀的發(fā)生并可形成較寬的清潔區(qū)。
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關(guān)鍵詞:
- 半導(dǎo)體; 硅; 鍺; 內(nèi)吸除; 清潔區(qū); 三步退火
Abstract: The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied. It is found that Ge not only can promote the out-diffusion of oxygen and form wider DFZ in Ge-Doped CZSi wafer than that in the control sample, but also can suppress the formation of precipitation. -
劉莉,秦福,等.92年全國集成電路硅材料會(huì)議論文集.杭州:1992, 81-84.[2]Tetuo Fukuda, Akira Ohsawa. Appl. Phys. Lett., 1992, 60(10): 1184-1186.[3]Sun Q, Yao K H, et al. J. Appl. Phys, 1990, 67: 9313-4319.[4]Gosclc U. Appl. Phys. A, 1982, 28: 79-82. -
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