鉭摻雜的釕基厚膜電阻導電相和玻璃相顆粒尺寸效應的研究
STUDY ON THE PARTICLE SIZE EFFECT OF Ta DOPED Ru-BASE THICK FILM RESISTOR
-
摘要: 本文報道了鉭摻雜釕基厚膜電阻制備過程中導電相和玻璃相顆粒尺寸效應的實驗研究結果。當導電相和玻璃相顆粒尺寸分別達到25和50nm時,電阻阻值和電阻溫度系數(shù)也隨之發(fā)生顯著變化,并嘗試根據(jù)厚膜電阻導電機理對其產(chǎn)生的原因進行定性的分析。Abstract: This paper reports the particle size effect on the resistance and TCR of Ta-doped Ru-base thick film resistor, which occurs when the particle sizes of two phases reach critical values (conductive phase 25nm, glass phase 50nm). And it can be explained qualitatively with the conduction mechanism of thick film resistor.
-
Inokuma T. Denki Kagaku, 1992, 50: 785-788.[2][2][3]Inokuma T. Denki Kagaku, 1983, 51: 721-726.[4]Boonstra A H, Mutsaers C A H A.[J]. Thin Solid Film.1980,67:13-[5]Inokuma T, et al, IEEE Trans. on CHMT, 1985, CHMT-8(3): 372-373.[6]Carciq P F, et al. J. Appl. Phys.,1982, 53(7): 5282 -5287.[7][6][8]巨新,等.電子學報,1993,21(5): 96-99.[9]埃克托瓦 L. 薄膜物理學,北京:科學出版社,1986,164- 178. -
計量
- 文章訪問數(shù): 1907
- HTML全文瀏覽量: 94
- PDF下載量: 442
- 被引次數(shù): 0