雪崩二極管的計(jì)算機(jī)模擬
IMPATT DIODE SIMULATION
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摘要: 本文討論了雪崩二極管計(jì)算機(jī)模擬的物理模型、計(jì)算方法和程序設(shè)計(jì)等問(wèn)題。特別詳細(xì)地介紹了半隱式方法,建立了一系列程序來(lái)計(jì)算雪崩二極管的直流小信號(hào)和大信號(hào)解。這一套程序原則上對(duì)于各種材料、各種形式摻雜分布的所有渡越時(shí)間型器件都是適用的,但文章中只給出了對(duì)硅雪崩二極管的計(jì)算結(jié)果。
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關(guān)鍵詞:
Abstract: A set of programs is estabilished for IMPATT Diode Simulation. It can be used to calculate the DC small signal and large signal solution of the IMPATT diodes made of different materials and having different doping profiles. The physical principles, numerical methods and program designs are discussed, and the half-implicit method is presented in detail. Those programs can be used to simulate all kinds of transit-time devices, but only the calculating results of Si IMPATT Diode are given. -
W. J. Evans and G. I. Haddad IEEE Trans. on ED, ED-15(1968),708.[2]C. W. Lee, R. J. Lomax and G. I. Haddad IEEE Trans. on MTT,MTT-22(1974), 160.[4]沈陽(yáng)計(jì)算技術(shù)研究所,電子計(jì)算機(jī)常用算法,科學(xué)出版社,1976年.[5]宋文淼等,雪崩器件的計(jì)算機(jī)模擬,中國(guó)科學(xué)院電子學(xué)研究所(內(nèi)部報(bào)告),1982年. -
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