Zn在InP中低溫?cái)U(kuò)散的研究
A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE
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摘要: 本文用Zn3P2源在閉管條件下研究了Zn在InP中的低溫(520700℃)擴(kuò)散。比較了用等溫?cái)U(kuò)散和雙溫區(qū)擴(kuò)散技術(shù)擴(kuò)散后,樣品的電學(xué)參數(shù)。結(jié)果表明:雙溫區(qū)擴(kuò)散法可得到表面光亮,無損傷的高濃度表面層。該法已用于InGaAsP/InP雙異質(zhì)結(jié)發(fā)光管的制備工藝中,并制得了光功率1mW,串聯(lián)電阻23的發(fā)光管。還討論了Zn在InP中擴(kuò)散時(shí)的行為,解釋了低溫(550℃)擴(kuò)散過程中,等溫?cái)U(kuò)散時(shí)出現(xiàn)的異?，F(xiàn)象。
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關(guān)鍵詞:
Abstract: In this report the diffusion of Zn in InP at low temperature is investigated. The experiment is accomplished in an evacuated and sealed quartz ampoule using Zn3P2 as the source of Zn.The electrical characteristics of the samples obtained by the isotemperature process and the two-temperature process are compared. It is found that the two-temperature process may obtain a smooth, no damage and high-concentration surface layer. This process has been applied to fabricate InGaAsP/InP light emitting diodes, and the diodes obtained have an output power of about 1mW with a series resistance of 23. the behaviors of Zn diffusion in InP are discussed, and the anomalous phenomena in isotemperature diffusion at 550℃ are explained. -
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