BF+2注入的多晶硅薄膜快速熱退火后氟行為的研究
FLUORINE BEHAVIOUR IN BF+2 IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING
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摘要: 本文報道BF+2注入的多晶硅薄膜經(jīng)快速熱退火后的物理和電學(xué)性質(zhì)。發(fā)現(xiàn)造成氟異常分布的原因是由于快速熱退火過程中氟的外擴散以及在多晶硅/二氧化硅界面處的聚集。在注入劑量為11015和51015cm-2的樣品中,經(jīng)快速熱退火后可以觀察到氟泡。
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關(guān)鍵詞:
- 離子注入; 快速熱退火; 氟泡
Abstract: The physical and electrical properties of BF+2 implanted polysilicon film subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion of F and its segregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalous migration. Fluorine bubbles were observed in BF+2 implanted samples at doses of 11015 and 51015cm-2 after RTA. -
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