Zn在Ge中擴(kuò)散的研究
STUDY OF THE DIFFUSION OF Zn INTO Ge
-
摘要: 用Zn作擴(kuò)散源在封閉的真空石英管中,研究了Zn在Ge中的擴(kuò)散問(wèn)題,給出了xj-t1/2關(guān)系和C-1/T關(guān)系,比較了擴(kuò)散源溫度對(duì)樣品表面形貌的影響。采用雙溫區(qū)擴(kuò)散工藝可獲得表面光亮的樣品。采用真空退火工藝可使擴(kuò)散樣品表面漏電流降低。
-
關(guān)鍵詞:
Abstract: In this report the diffusion of Zn into Ge is investigated. The experiments are accomplished in an evacuated and sealed quartz ampoule using Zn as the diffusion source. The xj-t1/2 and C-1/T has been given. The influence of the source temperature on rhe curface micro-graph has been given. It is found that using two-temperature process a smooth surface layer can be obtained. -
G. E. Stillman et. al.,Appl. Phys. Lett., 24(1974), 8.[2]Tokuzo Sukegawa et. al., ibid., 32(1978), 376.[3]C. A. Armiento et. al.,ibid., 34(1979), 229.[4]T. Kaneda et. al., ibid., 34(1979), 866.[5]謝希德,方俊鑫,固體物理學(xué)〔上冊(cè)),上?？茖W(xué)技術(shù)出版社,1961,139. -
計(jì)量
- 文章訪問(wèn)數(shù): 1760
- HTML全文瀏覽量: 126
- PDF下載量: 374
- 被引次數(shù): 0
下載:
