Cd和Zn在InP中擴(kuò)散的研究
STUDY OF THE DIFFUSION OF Cd AND Zn IN InP
-
摘要: 本文介紹了在450700℃的廣闊溫度范圍內(nèi)研究Cd和Zn向InP擴(kuò)散的結(jié)果,并對結(jié)果作了比較。詳細(xì)研究了Cd,Zn及其化合物等不同雜質(zhì)源對擴(kuò)散的影響。我們用結(jié)深(xj)的平方和時間(t)的比值(xj2/t)作為擴(kuò)散速度的度量,并畫出了xj2/t-1/T(溫度)曲線。發(fā)現(xiàn)Cd源,特別是CdP2源的擴(kuò)散速度較慢,容易控制它擴(kuò)散的結(jié)深和濃度,昕以它是比較理想的擴(kuò)散雜質(zhì)源。利用Tien的中性復(fù)合體理論,解釋了Cd和Zn在InP中擴(kuò)散的復(fù)雜現(xiàn)象。
-
關(guān)鍵詞:
Abstract: Study of the diffusion of Cd and Zn into InP at temperature of 450-700℃is described. The effects of various impurity sourees, such as Cd, Zn and their compounds on the diffusion are studied in detail. Using the ratio of the square of the diffusion depth x2 and the time t as the mcasure of the diffusion velocity, a plot of x2/t versus temperature T is given. It is found that the diffusion velocity of Cd is slower, especially when CdP2 is used as diffusion source, and thus the diffusion depth and concentration of Cd are easier to be controlled. So it is a more ideal diffusion impurity source. The complicated phenomena of Cd-and Zn-diffusion in InP are explained with neutral complex proposed by Tien (1979). -
E.W.Williams,W.Elder, M. G. Astles, M.Webb, I. B. Mullin, B. Straughan and P. J. Tufton, J. Electrcchem. Soc., 120(1973), 1741.[2]A. G. Foyt, J. Cryst. Growth, 54(1981), 1.[3]P. K. Tien and B. I. Miller, Appl. Phys. Lett., 34(1979), 701.[4]Y. Matsushima, N. Seki, S. Akiba, Y. Noda and Y. Kushiro, Electronics Letters, 19(1983) 845.[5]Y. Takanashi and Y. Horikoshi, Jpn. J. Appl. Phys., 18(1979), 1615.[6]水海龍,張桂成,鄔祥生,徐少華,胡道姍,李允平,發(fā)光與顯示,1982年,第3期,第72頁.[7]林兆槐,沈家樹,半導(dǎo)體光電,1982年,第2期,第34頁.[8]陳自姚,邵永富,彭瑞伍,半導(dǎo)體學(xué)報,3(1982),215.[9]Ken-Jchi Ohtsuka, Y. Yamazoe, T. Nishino and Y. Hamakawa, Jpn.J.Appl. Phys. 20(1981),1113.[10]N. Chand and P. A. Houston, ,Solid-State Electron., 25(1982).[11]B. Tuck and A. Hooper J. Phys. D: Appl. Phys. 8(1975), 1806.[12]逢永秀,府治平,科技通訊,1979年,第1期,第21頁.[13]R. L. Longini, Solid-State Electron., 5(1962), 127. -
計量
- 文章訪問數(shù): 2082
- HTML全文瀏覽量: 152
- PDF下載量: 595
- 被引次數(shù): 0
下載:
