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光電導(dǎo)歸一化法測量-Si:H隙態(tài)密度

徐樂,  劉啟一

徐樂, 劉啟一. 光電導(dǎo)歸一化法測量-Si:H隙態(tài)密度[J]. 電子與信息學(xué)報, 1986, 8(3): 217-222.
引用本文: 徐樂, 劉啟一. 光電導(dǎo)歸一化法測量-Si:H隙態(tài)密度[J]. 電子與信息學(xué)報, 1986, 8(3): 217-222.
Xu Le, Liu Qiyi. MEASUREMENT OF THE DENSITY OF THE GAP STATES IN a-Si:H BY THE NORMALIZATION OF PHOTOCONDUCTIVITY[J]. Journal of Electronics & Information Technology, 1986, 8(3): 217-222.
Citation: Xu Le, Liu Qiyi. MEASUREMENT OF THE DENSITY OF THE GAP STATES IN a-Si:H BY THE NORMALIZATION OF PHOTOCONDUCTIVITY[J]. Journal of Electronics & Information Technology, 1986, 8(3): 217-222.

光電導(dǎo)歸一化法測量-Si:H隙態(tài)密度

MEASUREMENT OF THE DENSITY OF THE GAP STATES IN a-Si:H BY THE NORMALIZATION OF PHOTOCONDUCTIVITY

  • 摘要: 本文用光電導(dǎo)歸一化法得出 -Si:H膜在低吸收區(qū)的光吸收系數(shù)譜;用電子從價帶的指數(shù)尾態(tài)和導(dǎo)帶邊以下1.0 eV處,由懸掛鍵形成的局域態(tài)到導(dǎo)帶擴展態(tài)的躍遷,解釋了實驗結(jié)果;并從而得出費米能級EF以下的隙態(tài)密度,通過對復(fù)合動力學(xué)的研究,還得到費米能級以上(EFn-EF)的局域態(tài)密度的平均值,從而得出費米能級以上部份的態(tài)密度。結(jié)果表明導(dǎo)帶尾比價帶尾窄。
      關(guān)鍵詞:
    •  
    Abstract: The spectra of the optical absorption conficient in the low absorption region are obtained by using a normalization procedure for the photoconductivity spectra. The results are explained in terms of optieal transitions of electrons from loealized states in exponential valence-band tail and in danglihg bond states. 1.0 eV below the conduction-band edge to extended states above the conduction-band edge. Then the density of the gap states below the Fermi energy EF is abtained. From the investigation of recombination kinetics, the average density of the gap states in the range of (EFn-EF) is obtained. Then the density of the gap states above the Fermi energy EF is obtained. It indicates that the width of the conduction-band tail is narrower than that of valence-band tail.
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  • M. Nack, M. Shur, W. Czubatyj, J. Yang and J. McGill,J.Non-Cryst. Solids, 59/60(1983), 1115.[2]Y. Kuwano, S. Tsuda and M. Ohnishi, Jpn J. Appl. Phys., 21(1982), 235.[3]M. Vanecek, J. Kocka, J. Stucklik and A. Triska, Solid State Comm., 39(1981), 1199.[4]M. Vanecek, J. Kocka, J. Stuchlik, Z. Kozisek, O. Stika and A. Triska, Solar Energy Materials, 8(1983), 411.[5]C. B. Roxlo, B. Abeles, C. R. Wronski, G. D. Cody and T. Tiedje, Solid State Comm., 47(1983),985.[6]T. Tiedje, J. M. Cebulka, D. L. Morel and B. Abeles; Phys. Rev. Lett., 21(1981), 1425.[7]G. Moddel, D. A. Anderson and W. Paul, Phys. Rev., B22(1980), 1918.[8]Xu Le, D. K. Reinhard and M. G. Thompson, IEEE Trans. on ED,ED-29(1982), 1004.[9]徐樂,電子科學(xué)學(xué)刊, 7(1985), 458.[10]A. Rose, Concepts in Photoconductivity and Allied Problems, Interscience, New York, 1963, p.38.[11]F. Evangelisti, P. Fiorini G. Fortunato and C. Giovannella, Solid State Comm., 47(1983), 107.[12]B. Abeles, C. R. Wronski, T. Tiedje and G. D. Cody, ibid., 36(1980), 537.[13]J. D .Cohen, D. V. Lang and J. P. Harbison, Phys. Rev. Lett., 45(1980), 197.[14]C. R. Wronski, B. Abeles, T. Tiedje and G. D. Cody, Solid State Comm., 44(1982), 1423.
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出版歷程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  1986-05-19

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