用深能級瞬態(tài)電容譜測定摻磷-Si:H的隙態(tài)密度
THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY
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摘要: 正 非晶硅的隙態(tài)密度在很大程度上決定了材料的電學(xué)和光學(xué)性質(zhì),因而對非晶硅隙態(tài)密度的研究具有重要的理論和實(shí)際意義。目前,對非晶硅隙態(tài)密度分布的認(rèn)識,仍存在著爭議。W.E.Spear.等人首先用場效應(yīng)方法測定了非晶硅的隙態(tài)密度分布,并在相當(dāng)一段時間為人們所接受。但由于場效應(yīng)方法在實(shí)驗(yàn)數(shù)據(jù)處理上存在著很大誤差。另外該方法的測量結(jié)果受界面態(tài)的影響很大。J.D.Cohen等人用深能級瞬態(tài)譜(DLTS)測
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關(guān)鍵詞:
Abstract: A density-of-state distribution in the pseudo-gap of phosphorus-doped a-Si:H material prepared by GD method has been measured experimentally by deep level tran-sient spectroscopy (DLTS). A minimum value of 71015cm-3 eV-1 has been obtained at the energy of about 0.45 eV below Ec. This physical picture is quite different from the previous one obtained by the field effect method. Some comments on the method used and the theoretical analysis are given. -
W. E. Spear and P. G. Le Comber, J. Non-Crystalline Solid, 8-10 (1972), 727.[2]N. B. Goodman, H. Fritzsche and H. Oyaki, J. Non-Crystalline Solid, 35-36(1980), 599.[3]J. D. Cohen, D. V. Lang, J. P. Harbison and J. C. Bean, Solar Cells, 2(1980), 331.[4]J. D. Cohen, D. V. Lang and J. P. Harbison, Phys. Rev. Lett.,45(1980), 197.[5]C. H. Hyun, M. S. Shur and A. Madan, Appl. phys. Lett., 41(1982), 178.[8]杜永昌,晏懋洵,物理,10(1981), 109. -
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