硅低溫雙極晶體管的數(shù)值模擬
NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR
-
摘要: 本文討論了有關(guān)低溫雙極器件模擬物理參數(shù)的低溫模型和各種低溫物理效應(yīng),確立了適用于低溫雙極器件模擬的數(shù)值分析方法,建立了適用于77-300K溫度范圍內(nèi)硅雙極器件模擬程序,最后模擬分析了一典型結(jié)構(gòu)品體管的常溫和低溫時(shí)的工作特性。
-
關(guān)鍵詞:
- 雙極晶體管; 器件模擬; 低溫; 優(yōu)化設(shè)計(jì)
Abstract: Numerical models for the physical parameters and physical effects about numerical simulation of low-temperature bipolar transistor are discussed. The numerical approaches required for simulation of low-temperature behavior are presented. A simulation program has been given to investigate bipolar transistor behavior range of 77-300K. Finally, the characteristics of a typical bipolar transistor are simulated at 300K and 77K. -
鄭茳.硅低溫雙極品體管的理論與優(yōu)化設(shè)計(jì):[博士論文],南京:東南大學(xué),1994.5.[2]Blaudau W, Onton A Heinke W. Temperature dependence of the bandgap of silicon[J].J. Appl. Phys.1974, 45(4):1846-1848[3]Wagner J, et al. Band-gap narrowing in heavily doped silicon: A comparison of optical and[4]electrical data. J. Appl. Phys，1988, 63(2): 425-433.[5]Slotboom W, H. C. De Graaff. Measurement of bandgap narrowing in silicon bipolar transistors. Solid-State Electronics, 1976, 19(10): 857-862.[6]Chen Y W, et al. Two-dimensional analysis of a BiNMOS transistor operating at 77K using a[7]modified PISCES program. IEEE Trans. on Electron Devices, 1992, ED-39(2): 348-356.[8]Selberherr S. MOS device modeling at 77K. IEEE Trans. on Electron Devices, 1989, ED-36(9): 1464-1476.[9]Ghazavi P, Ho F D.A numerical model for MOSFETs from liquid-nitrogen temperate to room temperate. IEEE Trans. on Electron Device, 1995, ED-42(1): 123-131.[10]Chen Y W, James B K. Two-dimensional analysis of a Binmos transistor operating at 77K using[11]a modified PISCES program. IEEE Trans. on Electron Devices, 1992, ED-39(2): 348-357. -
計(jì)量
- 文章訪問(wèn)數(shù): 2161
- HTML全文瀏覽量: 161
- PDF下載量: 680
- 被引次數(shù): 0
下載:
