高溫超導(dǎo)微波電路襯底材料復(fù)介電常數(shù)的測(cè)量
MEASUREMENT OF COMPLEX PERMITTIVITY OF MIC SUBSTRATES FOR DEPOSITION OF HTS THIN FILMS
-
摘要: 本文討論了在液氮溫度下高溫超導(dǎo)微波電路介質(zhì)襯底材料復(fù)介電常數(shù)測(cè)試技術(shù)。利用TMono模高Q圓柱形諧振腔,對(duì)高溫超導(dǎo)常用的幾種單晶介質(zhì)材料進(jìn)行了測(cè)試。結(jié)果表明,該測(cè)試技術(shù)在不同溫度下,可對(duì)低耗單晶和各向同性介質(zhì)材料進(jìn)行準(zhǔn)確的測(cè)試,且測(cè)試簡(jiǎn)便、迅速、自動(dòng)化程度高,具有測(cè)試介質(zhì)材料某一方向復(fù)介電常數(shù)的優(yōu)點(diǎn)。
-
關(guān)鍵詞:
- 諧振腔; 單晶介質(zhì)材料; 復(fù)介電常數(shù); 微波測(cè)量
Abstract: A technique is analysed for the determination of complex permittivity of MIC substrates for deposition of high- superconducting (HTS) thin films. By using high Q factor TM circular cavity, several monocrystals which are often used for deposition of HTS thin films are measured. The results show that the technique covers accurate measurements of the low-loww monocrystal and isotropy dielectric materials at different temperature, and the test is simple, rapid and automatic, and some directional complex permittivity of the dielectric materials can be measured. -
Wu M K, et al. Phys[J].Rev. Lett.1987, 58(5):908-910[2]Konopka J, et al. Dielectric Properties of Substrates for Deposition of High-Tc Thin Films up to[3]GHz, 1992 Applied Superconductivity Conference. Chicago:Aug. 1992.[4]Sobolewski R,et al. IEEE Trans. on MAG, 1991, MAG-27(2): 876-879.[5]Konapka J, et al. J[J].Appl. Phys.1992, 72(1):218-223[6]R. A 瓦爾特朗著,徐鯉庭譯.被導(dǎo)電磁波原理.北京:人民郵電出版社,1977,第五章. -
計(jì)量
- 文章訪問(wèn)數(shù): 2451
- HTML全文瀏覽量: 129
- PDF下載量: 443
- 被引次數(shù): 0
下載:
